HKZ40N120FHRB
優(yōu)勢介紹
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Ultra-low switching losses
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Ultra-low static losses
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Internal integrated SiC Schottky Diode (SBD)
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Plug-and-play replacement of pure Si-based IGBT
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Maximum junction temperature 175℃
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Qualified according to JEDEC for target applications
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RoHS compliant